ALD Barrier Deposition on Porous Low-k Dielectric Materials for Interconnects

被引：6

作者：

Van Elshocht, Sven ^{[1
]}

Delabie, Annelies ^{[1
]}

Dewilde, Sven ^{[1
]}

Meersschaut, Johan ^{[1
]}

Swerts, Johan ^{[1
]}

Tielens, Hilde ^{[1
]}

Verdonck, Patrick ^{[1
]}

Witters, Thomas ^{[1
]}

Vancoille, Eric ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 7 | 2011年 / 41卷 / 02期

关键词：

ATOMIC LAYER DEPOSITION; FILMS; NUCLEATION; CHEMISTRY; PLASMA;

D O I：

10.1149/1.3633651

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

To achieve very low permittivity values, advanced generations of low-k dielectrics for interconnects have a porous structure. Precursor penetration during metal barrier deposition by atomic layer deposition needs to be avoided not to degrade the low-k material properties. In this paper, we compare various options to seal a highly porous low-k material with a k-value of 2.0 against penetration during TaN ALD. This includes the exploration of a higher deposition temperature, the use of additional sealing layers, and the introduction of a short PVD Ta flash exposure prior to ALD. Depending on the technique used, pore penetration can be quasi completely avoided.

引用

页码：25 / 32

页数：8

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