Dielectric reliability in copper low-k interconnects

被引：0

作者：

Tökei, Z ^{[1
]}

Li, YL ^{[1
]}

Van Aelst, J ^{[1
]}

Beyer, GP ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

ADVANCED METALLIZATION CONFERENCE 2005 (AMC 2005) | 2006年

关键词：

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Time Dependent Dielectric Breakdown is used for assessing the integration quality of advanced copper low-k interconnects. In this contribution examples are shown for the various relevant physical mechanisms. These include interface related degradation - such as the CMP/cap or the barrier/dielectric interfaces - or intermetal dielectric degradation linked to plasma modification. A method is proposed for systematic investigation of various plasmas that potentially can influence the dielectric quality. Using spacing values relevant to the 32 nm technology node experimental TDDB data relevant to that node are also reported.

引用

页码：687 / 693

页数：7

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