New Perspectives of Dielectric Breakdown in Low-k Interconnects

被引：8
|
作者：
Yiang, Kok-Yong [1 ]
Yao, H. Walter [1 ]
Marathe, Amit [1 ]
Aubel, Oliver [2 ]
机构：
[1] Adv Micro Devices Inc, Technol Reliabil Dev, 1050 E Arques Ave, Sunnyvale, CA 94085 USA
[2] Adv Micro Devices Inc, Qual & Reliabil Engn, D-01109 Dresden, Germany
来源：
2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年
关键词：
BEOL; Time-dependent Dielectric Breakdown (TDDB); VRDB; E-model; root E-model;
D O I：
10.1109/IRPS.2009.5173299
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
An alternative method of analyzing time-dependent dielectric breakdown (TDDB) data for low-k dielectrics is presented. The analysis shows that time to breakdown is well correlated to the Poole-Frenkel emission equation, and therefore the root E-model is a more accurate model in describing the TDDB physics for low-k BEOL dielectrics.
引用
收藏
页码：476 / +
页数：3
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