Direct sub-100-nm patterning of an organic low-k dielectric for electrical and optical interconnects

被引：0
|
作者：
Jeffrey M. Catchmark
Guy P. Lavallee
Michael Rogosky
Youngchul Lee
机构：
[1] The Pennsylvania State University,Nanofabrication Facility, Department of Engineering Science and Mechanics, College of Engineering
[2] The Pennsylvania State University,Nanofabrication Facility
来源：
Journal of Electronic Materials | 2005年 / 34卷
关键词：
Bisbenzocyclobutene (BCB); cyclotene; copper interconnects; copper diffusion; damascene; low-k dielectric; interlayer dielectric; E-beam patterning; direct write;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Low-k dielectric materials compatible with copper interconnect fabrication processes extending to the sub-50-nm technology nodes are desired for high speed integrated circuit (IC) fabrication. We demonstrate that bisbenzocyclobutene (BCB), an organic low-k dielectric material, can be patterned with sub-100-nm resolution using electron beam lithography, providing new avenues for nanoscale electrical and optical interconnect fabrication.
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页码：L12 / L15
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