High Temperature Performance of Flexible SOI FinFETs with Sub-20 nm Fins

被引：0
|
作者：
Diab, A. [1 ]
Sevilla, G. A. Torres [1 ]
Ghoneim, M. T. [1 ]
Hussain, M. M. [1 ]
机构：
[1] King Abdullah Univ Sci & Technol, Integrated Nanotechnol Lab, Thuwal, Saudi Arabia
来源：
2014 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2014年
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D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
We demonstrate a flexible version of the semiconductor industry's most advanced transistor topology - FinFET on silicon-on-insulator (SOI) with sub-20 nm fins and high-kappa/metal gate stacks. This is the most advanced flexible (0.5 mm bending radius) transistor on SOI ever demonstrated for exciting opportunities in high performance flexible electronics with stylish product design. For the first time, we characterize such device from room to high temperature (150 degrees C). And we discuss the dependence of the I-V curves with temperature.
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