Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks

被引：10

作者：

Tseng, Li-Ting ^{[1
]}

Kazazis, Dimitrios ^{[1
]}

Wang, Xiaolong ^{[1
]}

Popescu, Carmen M. ^{[2
]}

Robinson, Alex P. G. ^{[3
]}

Ekinci, Yasin ^{[1
]}

机构：

[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[2] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England

[3] Univ Birmingham, Sch Chem Engn, Birmingham B15 2TT, W Midlands, England

来源：

MICROELECTRONIC ENGINEERING | 2019年 / 210卷

关键词：

Spin-on-carbon; Hard mask; Si etching; Reactive ion etching; Pattern transfer; INTERFERENCE LITHOGRAPHY; RESOLUTION; EUV;

D O I：

10.1016/j.mee.2019.03.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a novel and simple pattern transfer process into Si via fullerene-based spin-on-carbon (SOC) hard masks in this work. Electron beam lithography and extreme ultraviolet interference lithography techniques are used to pattern high-resolution and dense lines on a resist/SOC bilayer. The patterns are subsequently transferred by a low-pressure O-2 plasma etching (SOC) and reactive ion etching process with a gas mixture of SF6 and C4F8 (Si). Si sidewall trimming can be controlled by modifying the Si etching rate, achieving Si fins with dimension down to 15 nm half-pitch with aspect ratio as high as of 7:1.

引用

页码：8 / 13

页数：6