Study of nitridation plasma for ultra-thin gate dielectrics of 65 nm technology node and beyond

被引：0

作者：

Wu, HM ^{[1
]}

Gao, D ^{[1
]}

Mo, MX ^{[1
]}

Zhou, N ^{[1
]}

Chen, J ^{[1
]}

Zhu, B ^{[1
]}

Ning, J ^{[1
]}

Bonfanti, P ^{[1
]}

Kuo, J ^{[1
]}

Li, M ^{[1
]}

机构：

[1] Semicond Mfg Corp, LTDM, Shanghai, Peoples R China

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present paper, to find the effective optimization of operation parameters in manufacturing, the gate dielectric nitridation in high-density plasma has been systematically studied by both theoretical and experimental methods. The experimental data are validated against the modeling results. Some plasma parameter correlation has been established to provide a guideline to optimize the nitridation profile in gate dielectric layer across wafer. It paves a way to make further improvement of device performance.

引用

页码：415 / 418

页数：4

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