A 140-GHz 14-dBm Power Amplifier using Power Combiner based on Symmetric Balun in 65-nm Bulk CMOS

被引：0
|
作者：
Yamazaki, Daisuke [1 ]
Horikawa, Takamichi [1 ]
Iizuka, Tetsuya [1 ,2 ]
机构：
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo, Japan
[2] Univ Tokyo, Sch Engn, Syst Design Lab, Tokyo, Japan
来源：
2020 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2020年
关键词：
D-band; millimeter wave; power amplifier; power combiner; balun;
D O I：
10.1109/rfit49453.2020.9226186
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper proposes a 140-GHz power amplifier (PA) with 14-dBm saturated output power. Our PA uses a symmetric-balun-based power combiner in D-band, which relaxes the impedance matching with the former-stage amplifiers thanks to the balanced input impedance. The PA prototypes have been designed in 65-nm bulk CMOS process. The 2-parallel PA achieves 6.0dBm OP1dB with measurement, and 11.4dBm saturated output power is expected with simulation. The performance of the 4-parallel PA is verified with simulation that shows 9.4dBm OP1dB and 14dBm saturated output power.
引用
收藏
页码：79 / 81
页数：3
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