A 2.4-GHz, 27-dBm Asymmetric Multilevel Outphasing Power Amplifier in 65-nm CMOS

被引：82

作者：

Godoy, Philip A. ^{[1
]}

Chung, SungWon ^{[2
]}

Barton, Taylor W. ^{[2
]}

Perreault, David J. ^{[2
]}

Dawson, Joel L. ^{[2
]}

机构：

[1] Marvell Semicond, Santa Clara, CA 95130 USA

[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2012年 / 47卷 / 10期

关键词：

Digital predistortion; discrete supply modulator; linear amplification with nonlinear components (LINC); outphasing; power amplifier (PA); NM CMOS; EFFICIENCY;

D O I：

10.1109/JSSC.2012.2202810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a 2.4-GHz asymmetric multilevel outphasing (AMO) power amplifier (PA) with class-E branch amplifiers and discrete supply modulators integrated in a 65-nm CMOS process. AMO PAs achieve improved modulation band-width and efficiency over envelope tracking (ET) PAs by replacing the continuous supply modulator with a discrete supply modulator implemented with a fast digital switching network. Outphasing modulation is used to provide the required fine output envelope control. The AMO PA delivers 27.7-dBm peak output power with 45% system efficiency at 2.4 GHz. For a 20-MHz WLAN OFDM signal with 7.5-dB PAPR, the AMO PA achieves a drain efficiency of 31.9% and a system efficiency of 27.6% with an EVM of 2.7% rms.

引用

页码：2372 / 2384

页数：13

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