A 140-GHz 14-dBm Power Amplifier using Power Combiner based on Symmetric Balun in 65-nm Bulk CMOS

被引：0

作者：

Yamazaki, Daisuke ^{[1
]}

Horikawa, Takamichi ^{[1
]}

Iizuka, Tetsuya ^{[1
,2
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo, Japan

[2] Univ Tokyo, Sch Engn, Syst Design Lab, Tokyo, Japan

来源：

2020 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2020年

关键词：

D-band; millimeter wave; power amplifier; power combiner; balun;

D O I：

10.1109/rfit49453.2020.9226186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a 140-GHz power amplifier (PA) with 14-dBm saturated output power. Our PA uses a symmetric-balun-based power combiner in D-band, which relaxes the impedance matching with the former-stage amplifiers thanks to the balanced input impedance. The PA prototypes have been designed in 65-nm bulk CMOS process. The 2-parallel PA achieves 6.0dBm OP1dB with measurement, and 11.4dBm saturated output power is expected with simulation. The performance of the 4-parallel PA is verified with simulation that shows 9.4dBm OP1dB and 14dBm saturated output power.

引用

页码：79 / 81

页数：3

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