Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron-mobility transistors

被引：6

作者：

Yadav, Anupama ^{[1
]}

Glasscock, Cameron ^{[1
]}

Flitsiyan, Elena ^{[1
]}

Chernyak, Leonid ^{[1
]}

Lubomirsky, Igor ^{[2
]}

Khodorov, Sergey ^{[2
]}

Salzman, Joseph ^{[3
]}

Meyler, Boris ^{[3
]}

Coppola, Carlo ^{[4
]}

Guay, Sebestian ^{[4
]}

Boivin, Jasques ^{[4
]}

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel

[3] Technion Israel Inst Technol, Dept Elect Engn, IL-3200003 Haifa, Israel

[4] Nordion, Laval, PQ H7V 3S8, Canada

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2016年 / 171卷 / 3-4期

关键词：

High-electron-mobility transistors; activation energy; diffusion length; lifetime; gamma-irradiation; CARRIER DIFFUSION-LENGTH; V NITRIDE SEMICONDUCTORS; GALLIUM NITRIDE; DOPED GAN; RADIATION; DEVICES;

D O I：

10.1080/10420150.2016.1170018

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The impact of Co-60 gamma-irradiation on n-channel AlGaN/GaN high-electron-mobility transistors was studied by means of temperature-dependent electron beam-induced current (EBIC) and cathodoluminescence (CL) techniques. For the doses up to similar to 250 Gy, an enhancement of minority carrier transport was observed as evident from the EBIC measurements. This enhancement is associated with internal electron irradiation induced by the primary gamma photons. For the doses above similar to 250 Gy, deterioration in minority carrier transport was explained by carrier scattering on radiation-induced defects. It is shown that calculated activation energy from the EBIC and CL measurements follows exactly the same trend, which implies that the same underlying phenomenon is responsible for observed findings.

引用

页码：223 / 230

页数：8

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