A new design for improving the performance of AlGaN/GaN high-electron-mobility transistors

Gallium nitride (GaN) has found a unique role in the design of high-electron-mobility power devices due to its wide bandgap, high breakdown electric field, and appropriate saturation velocity. The main aim of this paper is to optimize the performance parameters of AlGaN/GaN high-electron-mobility transistors by optimizing the gate metal, the channel length, and the mole fraction of the AlGaN layer. The main objective of this performance optimization is to increase the on-state current, improve the I-ON/I-OFF ratio, and increase the threshold voltage of the transistor. The results show that the transistor with a 3-nm barrier layer (AlGaN) and 5-nm HfLaO gate oxide exhibits an on-state current of 304 mA and an I-ON/I-OFF ratio o f 11.4 x 10(14) at V-GS = 4 V, corresponding to a threshold voltage (V-th) of 1.39 V.