New features in Planar SiGe Channel Tunnel FETs Performance and Operation

被引：0

作者：

Le Royer, C. ^{[1
]}

Hutin, L. ^{[1
]}

Martinie, S. ^{[1
]}

Nguyen, P. ^{[1
]}

Barraud, S. ^{[1
]}

Glowacki, F. ^{[1
]}

Cristoloveanu, S. ^{[2
]}

Vinet, M. ^{[1
]}

机构：

[1] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

[2] INP Grenoble, MINATEC, MEP LAHC, Grenoble, France

来源：

2015 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the characterization of SiGe Tunnel FETs (TFETs) fabricated on SGOI with a standard CMOS process. The large gain in saturation gain (x20) is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels). We also investigate the ambipolar signature from the ID(VDS) of TFETs which we compare to MOSFETs. A simple protocol is proposed and validated to get a rapid insight in injection mechanism at the two junctions of any FET device.

引用

页数：2

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