New features in Planar SiGe Channel Tunnel FETs Performance and Operation

被引：0
|
作者：
Le Royer, C. [1 ]
Hutin, L. [1 ]
Martinie, S. [1 ]
Nguyen, P. [1 ]
Barraud, S. [1 ]
Glowacki, F. [1 ]
Cristoloveanu, S. [2 ]
Vinet, M. [1 ]
机构：
[1] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
[2] INP Grenoble, MINATEC, MEP LAHC, Grenoble, France
来源：
2015 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2015年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the characterization of SiGe Tunnel FETs (TFETs) fabricated on SGOI with a standard CMOS process. The large gain in saturation gain (x20) is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels). We also investigate the ambipolar signature from the ID(VDS) of TFETs which we compare to MOSFETs. A simple protocol is proposed and validated to get a rapid insight in injection mechanism at the two junctions of any FET device.
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