A 1.9-GHz DECT CMOS power amplifier with fully integrated multilayer LTCC passives

被引：44

作者：

Heo, D ^{[1
]}

Sutono, A ^{[1
]}

Chen, E ^{[1
]}

Suh, Y ^{[1
]}

Laskar, J ^{[1
]}

机构：

[1] Georgia Inst Technol, Packaging Res Ctr, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2001年 / 11卷 / 06期

关键词：

D O I：

10.1109/7260.928928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the first demonstration of a CMOS power amplifier (PA) utilizing fully integrated multilayer low-temperature co-fired ceramic (LTCC) high-Q passives for 1.9-GHz digital European cordless telecommunications (DECT) applications. The inductor and capacitor library were built in a multilayer LTCC board using a compact topology, An inductor Q-factor as high as 100 with a self-resonant frequency (SRF) as high as 8 GHz was demonstrated. Measured results of the CMOS-LTCC PA show good agreement with the simulated results exhibiting 48% power added efficiency, 26-dBm output power and 17-dB gain at 1.9 GHz with a 3,3-V drain supply voltage. This result is the first significant step toward a compact DECT transceiver module development utilizing fully integrated multilayer LTCC passives and a standard CMOS technology.

引用

页码：249 / 251

页数：3

共 50 条

[1] Fully integrated 1.9-GHz CMOS power amplifier for polar transmitter applications
Park, Changkun
Kim, Younsuk
Kim, Haksun
Hong, Songcheol
[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2006, 48 (10) : 2053 - 2056
[2] A fully integrated 1.9-GHz CMOS low-noise amplifier
Kim, CS
Park, M
Kim, CH
Hyeon, YC
Yu, HK
Lee, KR
Nam, KS
[J]. IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1998, 8 (08): : 293 - 295
[3] A 1.9GHz fully integrated CMOS DECT transceiver
Leeuwenburgh, AJ
ter Laak, JWF
Mulders, AG
Hoogstraate, AJ
van Laarhoven, PJM
Nijrolder, M
Prummel, JG
Kamp, PJM
[J]. 2003 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE: DIGEST OF TECHNICAL PAPERS, 2003, 46 : 450 - +
[4] A fully-integrated 1.8-V, 2.8-W, 1.9-GHz, CMOS power amplifier
Aoki, I
Kee, S
Rutledge, D
Hajimiri, A
[J]. 2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, : 199 - 202
[5] A 1.9-GHz cmos power amplifier using an interdigitated transmission line transformer
Park, Changkun
Baek, Sang-Hyun
Ku, Bon-Hyun
Hong, Songcheol
[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2007, 49 (12) : 3162 - 3166
[6] CHIP COLLECTION AIMS AT 1.9-GHZ DECT APPLICATIONS
不详
[J]. MICROWAVES & RF, 1993, 32 (03) : 173 - 173
[7] A 1.9-GHz CMOS Low Noise Amplifier with Partial Source Degeneration
Kretly, L. C.
Capovilla, C. E.
Tavora, A.
[J]. 2009 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE (IMOC 2009), 2009, : 30 - 32
[8] The noise and linearity optimization for a 1.9-GHz CMOS low noise amplifier
Guo, W
Huang, DQ
[J]. 2002 IEEE ASIA-PACIFIC CONFERENCE ON ASIC PROCEEDINGS, 2002, : 253 - 257
[9] 1.9-GHz CMOS power amplifier using a current source to enhance its dynamic range
Seo, Donghwan
Lim, Sung-Hun
Ahn, Hyeong-Joon
Park, Changkun
[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2014, 56 (08) : 1886 - 1891
[10] A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications
Tsai, KC
Gray, PR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (07) : 962 - 970

← 1 2 3 4 5 →