A fully integrated 1.9-GHz CMOS low-noise amplifier

被引：0
|
作者：
Kim, CS [1 ]
Park, M
Kim, CH
Hyeon, YC
Yu, HK
Lee, KR
Nam, KS
机构：
[1] Elect & Telecommun Res Inst, Semicond Div, Taejon 305350, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
来源：
IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1998年 / 8卷 / 08期
关键词：
CMOS LNA; fully integrated amplifier; low noise;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully integrated 1.9-GHz CMOS low-noise amplifier (LNA) has been implemented in a 0.8-mu m CMOS technology. For low-noise performance, the amplifier employs high-quality spiral inductors with a quality factor of 8.5-12.5, and device layout and bias condition of the active devices were optimized for low-noise conditions. This amplifier showed a noise figure of 2.8 dB with a forward gain of 15 dB at current consumption of 15 mA, To the authors' knowledge, this represents the lowest noise figure reported to date for a fully integrated CMOS LNA operating at 1.9 GHz.
引用
收藏
页码：293 / 295
页数：3
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