A 1.9-GHz CMOS Low Noise Amplifier with Partial Source Degeneration

被引:0
|
作者
Kretly, L. C. [1 ]
Capovilla, C. E. [1 ]
Tavora, A. [1 ]
机构
[1] Univ Estadual Campinas, Dept Microwave & Opt, Sch Elect & Comp Engn, Campinas, SP, Brazil
关键词
LNA; wireless communications; LNA-PSD; receiver; CMOS;
D O I
10.1109/IMOC.2009.5427638
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 1.9GHz fully integrated Low Noise Amplifier with Partial Source Degeneration technique (LNA-PSD) has been implemented in a 0.35 mu m CMOS technology. This amplifier provides a forward gain of 11dB with a noise figure of 3.4dB while drawing 11mW from a 1.8V supply source.
引用
收藏
页码:30 / 32
页数:3
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