Lattice-matched GaN-InAlN waveguides at λ=1.55 μm grown by metal-organic vapor phase epitaxy

被引：27

作者：

Lupu, A. ^{[1
]}

Julien, F. H. ^{[1
]}

Golka, S. ^{[2
]}

Pozzovivo, G. ^{[2
]}

Strasser, G. ^{[2
]}

Baumann, E. ^{[3
]}

Giorgetta, F. ^{[3
]}

Hofstetter, D. ^{[3
]}

Nicolay, S. ^{[4
]}

Mosca, M. ^{[4
]}

Feltin, E. ^{[4
]}

Carlin, J. -F. ^{[4
]}

Grandjean, N. ^{[4
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] Vienna Univ Technol, Zentrum Mikround Nanostrukturen, A-1040 Vienna, Austria

[3] Univ Neuchatel, CH-2000 Neuchatel, Switzerland

[4] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 1-4期

关键词：

GaN; intersubband (ISB) devices; optical communication; optical waveguide (WG);

D O I：

10.1109/LPT.2007.912551

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-mu m-wide WGs the propagation losses in the 1.5-to 1.58-mu m spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.

引用

页码：102 / 104

页数：3

共 50 条

[31] Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templates
Hemmingsson, C.
Boota, M.
Rahmatalla, R. O.
Junaid, M.
Pozina, G.
Birch, J.
Monemar, B.
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (02) : 292 - 297
[32] GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy
Takeuchi, Tetsuya
Kamiyama, Satoshi
Iwaya, Motoaki
Akasaki, Isamu
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (06)
[33] Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy
Honda, Tohru
Kobayashi, Toshiaki
Egawa, Shinichi
Sawada, Masaru
Sugimoto, Koichi
Baba, Taichi
JOURNAL OF CRYSTAL GROWTH, 2007, 300 (01) : 90 - 93
[34] CHARACTERIZATION OF THE SHALLOW AND DEEP LEVELS IN SI DOPED GAN GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
HACKE, P
MAEKAWA, A
KOIDE, N
HIRAMATSU, K
SAWAKI, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12A): : 6443 - 6447
[35] SUBSTRATE-POLARITY DEPENDENCE OF METAL-ORGANIC VAPOR-PHASE EPITAXY-GROWN GAN ON SIC
SASAKI, T
MATSUOKA, T
JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4531 - 4535
[36] In situ monitoring of GaN metal-organic vapor phase epitaxy by spectroscopic ellipsometry
Peters, S.
Schmidtling, T.
Trepk, T.
Pohl, U.W.
Zettler, J.-T.
Richter, W.
1600, American Institute of Physics Inc. (88):
[37] Metal-organic vapor phase epitaxy growth and characterization of AlN/GaN heterostructures
S. M. Hubbard
D. Pavlidis
V. Valiaev
A. Eisenbach
Journal of Electronic Materials, 2002, 31 : 395 - 401
[38] Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy
State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
不详
Wuli Xuebao, 2008, 9 (5923-5927):
[39] Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy
Shelton, Christopher T.
Bryan, Isaac
Paisley, Elizabeth A.
Sachet, Edward
Ihlefeld, Jon F.
Lavrik, Nick
Collazo, Ramon
Sitar, Zlatko
Maria, Jon-Paul
APL MATERIALS, 2017, 5 (09):
[40] Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy
Wang Lai
Zhang Xian-Peng
Xi Guang-Yi
Zhao Wei
Li Hong-Tao
Jiang Yang
Han Yan-Jun
Luo Yi
ACTA PHYSICA SINICA, 2008, 57 (09) : 5923 - 5927

← 1 2 3 4 5 →