Lattice-matched GaN-InAlN waveguides at λ=1.55 μm grown by metal-organic vapor phase epitaxy

被引：27

作者：

Lupu, A. ^{[1
]}

Julien, F. H. ^{[1
]}

Golka, S. ^{[2
]}

Pozzovivo, G. ^{[2
]}

Strasser, G. ^{[2
]}

Baumann, E. ^{[3
]}

Giorgetta, F. ^{[3
]}

Hofstetter, D. ^{[3
]}

Nicolay, S. ^{[4
]}

Mosca, M. ^{[4
]}

Feltin, E. ^{[4
]}

Carlin, J. -F. ^{[4
]}

Grandjean, N. ^{[4
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] Vienna Univ Technol, Zentrum Mikround Nanostrukturen, A-1040 Vienna, Austria

[3] Univ Neuchatel, CH-2000 Neuchatel, Switzerland

[4] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 1-4期

关键词：

GaN; intersubband (ISB) devices; optical communication; optical waveguide (WG);

D O I：

10.1109/LPT.2007.912551

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-mu m-wide WGs the propagation losses in the 1.5-to 1.58-mu m spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.

引用

页码：102 / 104

页数：3

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