Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy

被引：4
|
作者：
Honda, Tohru [1 ]
Kobayashi, Toshiaki [1 ]
Egawa, Shinichi [1 ]
Sawada, Masaru [1 ]
Sugimoto, Koichi [1 ]
Baba, Taichi [1 ]
机构：
[1] Kogakuin Univ, Dept Elect Engn, Hachioji, Tokyo 1920015, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 300卷 / 01期
关键词：
electroluminescence; photoluminescence; UV; MOVPE; GaN; Schottky;
D O I：
10.1016/j.jcrysgro.2006.10.208
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Photoluminescence (PL) spectra of GaN layers grown on sapphire substrates by metal-organic vapor phase epitaxy (MOVPE) were observed at temperatures from RT to 500 K. The spectra include the near-band-edge emission (NBE) and yellow luminescence (YL). The peak energy of the NBE is shifted towards lower energy with increasing observed temperature. UV light-emitting diodes (LEDs) utilizing band-gap narrowing due to thermal effects are proposed and their advantages for integration are discussed. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：90 / 93
页数：4
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