Conduction Mechanisms and Environmental Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Transistors

被引：22

作者：

Weis, Sebastian ^{[2
]}

Koermer, Richard ^{[3
]}

Jank, Michael P. M. ^{[1
]}

Lemberger, Martin ^{[1
]}

Otto, Michael ^{[1
]}

Ryssel, Heiner ^{[1
]}

Peukert, Wolfgang ^{[3
]}

Frey, Lothar ^{[1
,2
]}

机构：

[1] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Chair Electron Devices, D-91058 Erlangen, Germany

[3] Univ Erlangen Nurnberg, Inst Particle Technol, D-91058 Erlangen, Germany

来源：

SMALL | 2011年 / 7卷 / 20期

关键词：

AEROSOL SYNTHESIS; NANOWIRES;

D O I：

10.1002/smll.201100703

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Room-temperature, solution-processed, silicon nanoparticle thin films show significant gating with distinct hysteresis in their current-voltage characteristics. Device performance strongly depends on measurement environment and charge transport is determined by particle surfaces. Particle encapsulation with polymethyl methacrylate or Al 2O 3 reduces hysteresis and device sensitivity against environmental influences. Both Al 2O 3 coating and UV exposure during measurements alter current transport and enhance conductivity, providing evidence for surface-dominated transport. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2853 / 2857

页数：5

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