An X-ray diffraction study of direct-bonded silicon interfaces: A model semiconductor grain boundary

被引：9

作者：

Howes, PB ^{[1
]}

Benamara, M

Grey, F

Feidenhansl, R

Nielsen, M

Rasmussen, FB

Baker, J

机构：

[1] Riso Natl Lab, DK-4000 Roskilde, Denmark

[2] Tech Univ Denmark, Ctr Microelect, DK-2800 Lyngby, Denmark

来源：

PHYSICA B | 1998年 / 248卷

关键词：

X-ray diffraction; semiconductors; twist grain boundaries;

D O I：

10.1016/S0921-4526(98)00206-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Semiconductor wafer bonding techniques have been used to create a giant twist grain boundary from two Si(001) wafers. We show, using X-ray diffraction measurements that after annealing the interface forms a highly ordered superstructure with relaxations extending to many layers into the crystals on either side of the interface. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：74 / 78

页数：5

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