An X-ray diffraction study of direct-bonded silicon interfaces: A model semiconductor grain boundary

被引：9
|
作者：
Howes, PB [1 ]
Benamara, M
Grey, F
Feidenhansl, R
Nielsen, M
Rasmussen, FB
Baker, J
机构：
[1] Riso Natl Lab, DK-4000 Roskilde, Denmark
[2] Tech Univ Denmark, Ctr Microelect, DK-2800 Lyngby, Denmark
来源：
PHYSICA B | 1998年 / 248卷
关键词：
X-ray diffraction; semiconductors; twist grain boundaries;
D O I：
10.1016/S0921-4526(98)00206-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Semiconductor wafer bonding techniques have been used to create a giant twist grain boundary from two Si(001) wafers. We show, using X-ray diffraction measurements that after annealing the interface forms a highly ordered superstructure with relaxations extending to many layers into the crystals on either side of the interface. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：74 / 78
页数：5
相关论文
共 50 条
  • [21] Nitridation study of reaction-bonded silicon nitride in situ by high temperature X-ray diffraction
    Lei, B
    Babushkin, O
    Warren, R
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1997, 17 (09) : 1113 - 1118
  • [22] X-RAY CHARACTERIZATION OF SEMICONDUCTOR SURFACES AND INTERFACES
    PLOTZ, W
    HOLY, V
    HOOGENHOF, WVD
    LISCHKA, K
    JOURNAL DE PHYSIQUE III, 1994, 4 (09): : 1565 - 1571
  • [23] X-ray diffraction for surfaces and buried interfaces
    Renaud, G
    SURFACE REVIEW AND LETTERS, 2000, 7 (04) : 437 - 446
  • [24] X-RAY DIFFRACTION OF INTERFACES IN NANOCRYSTALS.
    Wang, Yuming
    Xing, Kai
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1996, 52 : C585 - C585
  • [25] X-ray diffraction analysis of buried interfaces
    Bourret, A
    JOURNAL DE PHYSIQUE IV, 1997, 7 (C6): : 19 - 29
  • [26] The interface structure in directly bonded silicon crystals studied by synchrotron X-ray diffraction
    Nielsen, M
    Feidenhans'l, R
    Howes, PB
    Vedde, J
    Rasmussen, K
    Benamara, M
    Grey, F
    SURFACE SCIENCE, 1999, 442 (01) : L989 - L994
  • [27] Characterization of the silicon on insulator film in bonded wafers by high resolution X-ray diffraction
    IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, United States
    Appl Phys Lett, 6 (787-789):
  • [28] Characterization of the silicon on insulator film in bonded wafers by high resolution x-ray diffraction
    Cohen, GM
    Mooney, PM
    Jones, EC
    Chan, KK
    Solomon, PM
    Wong, HSP
    APPLIED PHYSICS LETTERS, 1999, 75 (06) : 787 - 789
  • [29] Interface structure in directly bonded silicon crystals studied by synchrotron X-ray diffraction
    Nielsen, M.
    Feidenhans'L, R.
    Howes, P.B.
    Vedde, J.
    Rasmussen, K.
    Benamara, M.
    Grey, F.
    Surface Science, 1999, 442 (01):
  • [30] X-RAY DIFFRACTION FOR SUPPORT OF SEMICONDUCTOR MANUFACTURE
    NEIFEIND, A
    KEPPLER, U
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE KRISTALLGEOMETRIE KRISTALLPHYSIK KRISTALLCHEMIE, 1970, 132 (4-6): : 442 - &
12345