Spin-dependent tunneling in III-V semiconductors

被引：0

作者：

Richard, S ^{[1
]}

Drouhin, HJ ^{[1
]}

Fishman, G ^{[1
]}

Rougemaille, N ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2005年 / 772卷

关键词：

COMPLEX BAND-STRUCTURES;

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We calculate evanescent waves in GaAs-like III-V semiconductors throughout the forbidden band gap taking into account both the absence of inversion center and the spin-orbit coupling. We find that the evanescent energy bands are spin-split and that the evanescent wave functions only exist in limited energy and wave-vector domains. Such tunnel barriers can be used as solid-state spin injectors.

引用

页码：1345 / 1346

页数：2

共 50 条

[1] Spin-dependent properties of magnetic III-V semiconductors
Ohno, H
PHYSICS AND APPLICATIONS OF SEMICONDUCTOR QUANTUM STRUCTURES, 2001, : 337 - 354
[2] Effects of spin-dependent tunneling in III-V semiconductor heterostructures
Yassievich, I. N.
Alekseev, P. S.
Tarasenko, S. A.
Perel, V. I.
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 1259 - +
[3] Spin-dependent transport in SiC and III-V semiconductor devices
Reinacher, NM
Brandt, MS
Stutzmann, M
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1915 - 1922
[4] Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures
Ohno, H
Matsukura, F
Ohno, Y
SOLID STATE COMMUNICATIONS, 2001, 119 (4-5) : 281 - 289
[5] Resonant spin splitting in III-V semiconductors
Skierkowski, A
Majewski, JA
ACTA PHYSICA POLONICA A, 2005, 108 (05) : 867 - 872
[6] Spin scattering by dislocations in III-V semiconductors
Jena, D
PHYSICAL REVIEW B, 2004, 70 (24) : 1 - 8
[7] Spin-dependent transmission of holes in III-V diluted magnetic semiconductor based heterostructure
Dakhlaoui, H.
Jaziri, S.
MICROELECTRONICS JOURNAL, 2006, 37 (08) : 690 - 694
[8] Spin-Dependent Electronic Dynamics in a Hybrid Nonresonance III-V/II-VI Heterostructure
Kaibyshev, V. Kh.
Toropov, A. A.
Sorokin, S. V.
Sedova, I. V.
Klimko, G. V.
Terent'ev, Ya. V.
Ivanov, S. V.
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2018, 126 (02) : 210 - 216
[9] Spin-dependent recombination in semiconductors
Bagraev, N.T.
Mashkov, V.A.
Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 1988, 52 (03): : 51 - 55
[10] SPIN-DEPENDENT RECOMBINATION IN SEMICONDUCTORS
MIMA, LS
TRETYAK, OV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1003 - 1004

← 1 2 3 4 5 →