Spin-dependent tunneling in III-V semiconductors

被引：0
|
作者：
Richard, S [1 ]
Drouhin, HJ [1 ]
Fishman, G [1 ]
Rougemaille, N [1 ]
机构：
[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2005年 / 772卷
关键词：
COMPLEX BAND-STRUCTURES;
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We calculate evanescent waves in GaAs-like III-V semiconductors throughout the forbidden band gap taking into account both the absence of inversion center and the spin-orbit coupling. We find that the evanescent energy bands are spin-split and that the evanescent wave functions only exist in limited energy and wave-vector domains. Such tunnel barriers can be used as solid-state spin injectors.
引用
收藏
页码：1345 / 1346
页数：2
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