Spin-dependent tunneling in III-V semiconductors

被引：0

作者：

Richard, S ^{[1
]}

Drouhin, HJ ^{[1
]}

Fishman, G ^{[1
]}

Rougemaille, N ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2005年 / 772卷

关键词：

COMPLEX BAND-STRUCTURES;

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We calculate evanescent waves in GaAs-like III-V semiconductors throughout the forbidden band gap taking into account both the absence of inversion center and the spin-orbit coupling. We find that the evanescent energy bands are spin-split and that the evanescent wave functions only exist in limited energy and wave-vector domains. Such tunnel barriers can be used as solid-state spin injectors.

引用

页码：1345 / 1346

页数：2

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