Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures

被引：34
|
作者：
Ohno, H [1 ]
Matsukura, F [1 ]
Ohno, Y [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
SOLID STATE COMMUNICATIONS | 2001年 / 119卷 / 4-5期
基金：
日本学术振兴会;
关键词：
heterojunctions; electronic transport; galvanomagnetic effects; tunneling;
D O I：
10.1016/S0038-1098(01)00175-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
III-V ferromagnetic semiconductors allow epitaxial integration of ferromagnetism with nonmagnetic semiconductor heterostructures and offer opportunities to explore properties that combine conventional semiconductor physics with magnetic cooperative phenomena. Here, we review spin-dependent phenomena observed in III-V-based ferromagnetic semiconductor heterostructures, which include spin-dependent scattering, tunnel magnetoresistance, resonant tunneling with ferromagnetic emitter, spin injection, and electric field control of ferromagnetism. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：281 / 289
页数：9
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