Ferromagnetic III-V heterostructures

被引：44
|
作者：
Ohno, H [1 ]
机构：
[1] Tohoku Univ, Lab Elect Intelligent Syst, Res Inst Elect Commun, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 04期
关键词：
D O I：
10.1116/1.1305944
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Properties of the ferromagnetic III-V semiconductor (Ga,Mn)As and heterostructures based on it are reviewed. A model based on hole-mediated ferromagnetic interaction is shown to successfully describe the ferromagnetic transition temperature of (Ga,Mn)As. Spontaneous splitting of resonant tunneling spectra was compared with theory and shown to result from the spin splitting of the valence band. The first demonstration of spin-dependent scattering in magnetic semiconductor trilayers as well as electrical spin injection is also reviewed. (C) 2000 American Vacuum Society. [S0734-211X(00)06004-2].
引用
收藏
页码：2039 / 2043
页数：5
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