Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices

被引：4
|
作者：
Xu, YB [1 ]
Freeland, DJ
Tselepi, M
Guertler, CM
Lee, WY
Bland, JAC
Holmes, SN
Patel, NK
Ritchie, DA
机构：
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Toshiba Cambridge Res Lab, Cambridge CB4 1NB, England
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期
基金：
英国工程与自然科学研究理事会;
关键词：
ultrathin films interface magnetism; Fe/GaAs; Fe/InAs; magnetoelectronics;
D O I：
10.1109/20.800623
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The interface magnetic and electronic properties of two Fe/III-V semiconductor systems, namely Fe/GaAs and Fe/InAs, grown at room temperature have been studied. A "magnetic interface", which is essential for the fabrication of magneto-electronic (ME) devices, was realized in both Fe/GaAs and Fe/InAs systems with suitable substrate processing and growth conditions. Furthermore, Fe/InAs was shown to have favorable interface electronic properties as Fe forms a low resistance ohmic contact on InAs. Two prototypes of ME device based on Fe/InAs are also discussed.
引用
收藏
页码：3661 / 3663
页数：3
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