Strain relaxation in III-V semiconductor heterostructures

被引：15
|
作者：
Goodhew, PJ [1 ]
Giannakopoulos, K [1 ]
机构：
[1] Univ Liverpool, Liverpool L69 3GH, Merseyside, England
来源：
MICRON | 1999年 / 30卷 / 01期
基金：
英国工程与自然科学研究理事会;
关键词：
strain relaxation; semiconductors; InGaAs/GaAs system;
D O I：
10.1016/S0968-4328(98)00038-9
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Strain relaxation in III-V semiconductor (001) epitaxial strained layers is considered with particular reference to the InGaAs/GaAS system. Possible mechanisms of relaxation are briefly reviewed. It is pointed out that relaxation is, and never can be, complete and that results relating to the extent of relaxation of thick layers, and the asymmetry of such relaxation in the two (110) should be interpreted with caution. Any asymmetry introduced by the use of vicinal substrates is less than the scatter among experimental measurements of relaxation. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：59 / 64
页数：6
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