Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures

被引：34
|
作者：
Ohno, H [1 ]
Matsukura, F [1 ]
Ohno, Y [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
SOLID STATE COMMUNICATIONS | 2001年 / 119卷 / 4-5期
基金：
日本学术振兴会;
关键词：
heterojunctions; electronic transport; galvanomagnetic effects; tunneling;
D O I：
10.1016/S0038-1098(01)00175-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
III-V ferromagnetic semiconductors allow epitaxial integration of ferromagnetism with nonmagnetic semiconductor heterostructures and offer opportunities to explore properties that combine conventional semiconductor physics with magnetic cooperative phenomena. Here, we review spin-dependent phenomena observed in III-V-based ferromagnetic semiconductor heterostructures, which include spin-dependent scattering, tunnel magnetoresistance, resonant tunneling with ferromagnetic emitter, spin injection, and electric field control of ferromagnetism. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：281 / 289
页数：9
相关论文
共 50 条
  • [21] The influence of the additional confining potentials on ferromagnetism in III-V digital ferromagnetic heterostructures
    Zhou, X. H.
    Chen, Xiaoshuang
    Huang, Y.
    Duan, H.
    Sun, L. Z.
    Lu, W.
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)
  • [22] Spin-dependent thermoelectric phenomena in a quantum dot attached to ferromagnetic and superconducting electrodes
    Trocha, Piotr
    Barnas, Jozef
    PHYSICAL REVIEW B, 2017, 95 (16)
  • [23] Spin lifetimes in III-V heterostructures originating from zincblende symmetry
    Lau, Wayne H., 2000, IEEE, Piscataway, NJ, United States
  • [24] Tunable spin polarization in III-V quantum wells with a ferromagnetic barrier
    Myers, RC
    Gossard, AC
    Awschalom, DD
    PHYSICAL REVIEW B, 2004, 69 (16) : 161305 - 1
  • [25] Monte Carlo study of diffusion phenomena in III-V modulation doped heterostructures
    Sleiman, A
    Thobel, JL
    Bourel, P
    Dessenne, F
    Fauquembergue, R
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (01) : 69 - 76
  • [26] Current-induced spin torques in III-V ferromagnetic semiconductors
    Culcer, Dimitrie
    Lucassen, M. E.
    Duine, R. A.
    Winkler, R.
    PHYSICAL REVIEW B, 2009, 79 (15)
  • [27] SPIN-DEPENDENT TUNNELING INTO FERROMAGNETIC NICKEL
    TEDROW, PM
    MESERVEY, R
    PHYSICAL REVIEW LETTERS, 1971, 26 (04) : 192 - &
  • [28] Spin-polarized electroluminescence and spin-dependent photocurrent in hybrid semiconductor/ferromagnetic heterostructures: An asymmetric problem
    Renucci, P.
    Truong, V. G.
    Jaffres, H.
    Lombez, L.
    Binh, P. H.
    Amand, T.
    George, J. M.
    Marie, X.
    PHYSICAL REVIEW B, 2010, 82 (19)
  • [29] Spin-dependent electron transport in nonmagnetic semiconductor nanostructures
    Radovanovic, Jelena
    Isic, Goran
    Milanovic, Vitomir
    OPTICAL MATERIALS, 2008, 30 (07) : 1134 - 1138
  • [30] Resonant spin-dependent electron coupling in a III-V/II-VI heterovalent double quantum well
    Toropov, AA
    Sedova, IV
    Sorokin, SV
    Terent'ev, YV
    Ivchenko, EL
    Ivanov, SV
    PHYSICAL REVIEW B, 2005, 71 (19):
12345