Ultra shallow junction doping technology for sub-100nm CMOS

被引：0
|
作者：
Mizuno, B
机构：
来源：
2001 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS | 2001年
关键词：
D O I：
10.1109/VTSA.2001.934474
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
We are greeting the technology "Quantum Leap" encompassing low energy doping processes and novel annealing technologies to be the standard technology which can achieve the ultra shallow junction with very high throughput and lower resistance. The technology is applied to fabricate the sub-100 nm CMOS.
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页码：26 / 28
页数：3
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