Body-Bias Effect in SOI FinFET for Low-Power Applications: Gate Length Dependence

被引：0
|
作者：
Sachid, Angada B. [1 ]
Khandelwal, Sourabh [1 ]
Hu, Chenming [1 ]
机构：
[1] Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2014年
关键词：
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.
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页数：2
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