High frequency performances of a soi technology for low-power, low-voltage applications

被引：0
|
作者：
FerletCavrois, V
Marcandella, C
Pelloie, JL
Raynaud, C
Faynot, O
机构：
来源：
PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES | 1997年 / 97卷 / 23期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Unity-gain frequencies f(T) of 34 GHz and maximum oscillation frequencies f(max) of 28 GHz have been measured on 0.2 mu m gate length NMOS transistors. The transistors are fabricated with a standard low-power, low-voltage SOI process by the CEA/LETI (1) without air-bridges, gold gates, nor high-resistivity SOI substrate (MICROX (2)). These results show the possible integration of microwave devices with digital or analog circuits on a single chip for portable telecommunication applications (3, 4).
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页码：373 / 377
页数：5
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