High gain gate/body tied NMOSFET photo-detector on SOI substrate for low power applications

被引：8

作者：

Zhang, WQ ^{[1
]}

Chan, MS

Huang, R

Ko, PK

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

[2] Peking Univ, Inst Microelect, Peking, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 03期

关键词：

D O I：

10.1016/S0038-1101(99)00260-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report the performance of a novel photo-detector fabricated on an SOI substrate using a standard DTMOS process. The photo-detector is formed by connecting the NMOSFET gate and body. The gate-body terminal is left floating so that the potential can be modulated by illumination. The depletion region induced by the floating gate separates the optically generated electron-hole pairs in the direction perpendicular to the current. This increases the body potential and induces positive charges to the gate due to the gate/body tie. It results in further turn on of the NMOSFET and extra optical current. A wide signal range of more than six orders of magnitude and a maximum responsivity of 1.2 x 10(3) A/W have been obtained with an operating voltage as low as 0.2 V. The behavior of the device under scaling is also discussed. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：535 / 540

页数：6

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