Body-Bias Effect in SOI FinFET for Low-Power Applications: Gate Length Dependence

被引：0

作者：

Sachid, Angada B. ^{[1
]}

Khandelwal, Sourabh ^{[1
]}

Hu, Chenming ^{[1
]}

机构：

[1] Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2014年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.

引用

页数：2

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