Piezoresistive effect in top-down fabricated silicon nanowires

被引：0

作者：

Reck, K. ^{[1
]}

Richter, J. ^{[1
]}

Hansen, O. ^{[1
]}

Thomsen, E. V. ^{[1
]}

机构：

[1] Tech Univ Denmark, DK-2800 Lyngby, Denmark

来源：

MEMS 2008: 21ST IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Encouraged by the results of He and Yang [1], we have designed and fabricated silicon test chips to investigate the piezoresistive properties of both crystalline and polycrystalline nanowires using a top-down approach, in order to comply with conventional fabrication techniques. The test chip consists of 5 silicon nanowires and a reference resistor, each with integrated contacts for electrical 4-point measurements. We show an increase in the piezoresistive effect of 633% compared to bulk silicon. Preliminary temperature measurements indicate a larger temperature dependence of silicon nanowires, compared to bulk silicon. An increase of up to 34% compared to bulk polysilicon is observed in polysilicon nanowires with decreasing dimensions.

引用

页码：717 / 720

页数：4

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