Top-Down Processed Silicon Nanowires for Thermoelectric Applications

被引：6

作者：

Jang, Moongyu ^{[1
]}

Park, Youngsam ^{[1
]}

Hyun, Younghoon ^{[1
]}

Jun, Myungsim ^{[1
]}

Choi, Sung-Jin ^{[1
,2
]}

Zyung, Taehyung ^{[1
]}

Kim, Jong-Dae ^{[1
]}

机构：

[1] ETRI, Convergence Components & Mat Res Lab, Taejon 305700, South Korea

[2] Korea Adv Inst Sci & Technol, EECS, Taejon 305701, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 04期

关键词：

Silicon Nanowire; Top-Down Process; Thermoelectricity; Seebeck Coefficient; FIGURE; MERIT;

D O I：

10.1166/jnn.2012.5580

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

50 nm wide n-type silicon nanowires have been manufactured by using a top-down process in order to investigate the thermoelectric properties of silicon nanowire. Nanowire test structures with platinum heaters and temperature sensors were fabricated. The extracted temperature coefficient of resistance (TCR) of the temperature sensors was 786.6 PPM/K. Also, the extracted Seebeck coefficient and power factor of the 50 nm wide phosphorus doped n-type silicon nanowires were -118 mu V/K and 2.16 mW.K-2.m(-1).

引用

页码：3552 / 3554

页数：3

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