Top-Down Processed Silicon Nanowires for Thermoelectric Applications

被引：6

作者：

Jang, Moongyu ^{[1
]}

Park, Youngsam ^{[1
]}

Hyun, Younghoon ^{[1
]}

Jun, Myungsim ^{[1
]}

Choi, Sung-Jin ^{[1
,2
]}

Zyung, Taehyung ^{[1
]}

Kim, Jong-Dae ^{[1
]}

机构：

[1] ETRI, Convergence Components & Mat Res Lab, Taejon 305700, South Korea

[2] Korea Adv Inst Sci & Technol, EECS, Taejon 305701, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 04期

关键词：

Silicon Nanowire; Top-Down Process; Thermoelectricity; Seebeck Coefficient; FIGURE; MERIT;

D O I：

10.1166/jnn.2012.5580

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

50 nm wide n-type silicon nanowires have been manufactured by using a top-down process in order to investigate the thermoelectric properties of silicon nanowire. Nanowire test structures with platinum heaters and temperature sensors were fabricated. The extracted temperature coefficient of resistance (TCR) of the temperature sensors was 786.6 PPM/K. Also, the extracted Seebeck coefficient and power factor of the 50 nm wide phosphorus doped n-type silicon nanowires were -118 mu V/K and 2.16 mW.K-2.m(-1).

引用

页码：3552 / 3554

页数：3

共 50 条

[21] Size-dependent modulation of carrier mobility in top-down fabricated silicon nanowires
Sekaric, Lidija
Gunawan, Oki
Majumdar, Amlan
Liu, Xiao Hu
Weinstein, Dana
Sleight, Jeffrey W.
APPLIED PHYSICS LETTERS, 2009, 95 (02)
[22] Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%
Minamisawa, R. A.
Sueess, M. J.
Spolenak, R.
Faist, J.
David, C.
Gobrecht, J.
Bourdelle, K. K.
Sigg, H.
NATURE COMMUNICATIONS, 2012, 3
[23] Thermal and electromechanical characterization of top-down fabricated p-type silicon nanowires
Bosseboeuf, Alain
Allain, Pierre Etienne
Parrain, Fabien
Le Roux, Xavier
Isac, Nathalie
Jacob, Serge
Poizat, Alexis
Coste, Philippe
Maaroufi, Seiffedine
Walther, Arnaud
ADVANCES IN NATURAL SCIENCES-NANOSCIENCE AND NANOTECHNOLOGY, 2015, 6 (02)
[24] Silicon Nanowire Arrays and Crossbars: Top-Down Fabrication Techniques and Circuit Applications
Ben-Jamaa, M. Haykel
Gaillardon, Pierre-Emmanuel
Clermidy, Fabien
O'Connor, Ian
Sacchetto, Davide
De Micheli, Giovanni
Leblebici, Yusuf
SCIENCE OF ADVANCED MATERIALS, 2011, 3 (03) : 466 - 476
[25] Large initial compressive stress in top-down fabricated silicon nanowires evidenced by static buckling
Allain, P. E.
Le Roux, X.
Parrain, F.
Bosseboeuf, A.
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2013, 23 (01)
[26] Correlation between Surface Stress and Apparent Young's Modulus of Top-Down Silicon Nanowires
Pennelli, Giovanni
Totaro, Massimo
Nannini, Andrea
ACS NANO, 2012, 6 (12) : 10727 - 10734
[27] Silicon nanowires honeycomb array fabrication with low-cost top-down technology on (111) silicon wafer
Yu, Xiao
Wang, Yuchen
Li, Tie
Wang, Yuelin
2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013, 2013, : 1115 - 1118
[28] Silicon Nanowires: A Breakthrough for Thermoelectric Applications
Pennelli, Giovanni
Dimaggio, Elisabetta
Masci, Antonella
MATERIALS, 2021, 14 (18)
[29] Top-down Causation Without Top-down Causes
Carl F. Craver
William Bechtel
Biology & Philosophy, 2007, 22 : 547 - 563
[30] Top-down causation without top-down causes
Craver, Carl F.
Bechtel, William
BIOLOGY & PHILOSOPHY, 2007, 22 (04) : 547 - 563

← 1 2 3 4 5 →