Piezoresistive effect in top-down fabricated silicon nanowires

被引：0
|
作者：
Reck, K. [1 ]
Richter, J. [1 ]
Hansen, O. [1 ]
Thomsen, E. V. [1 ]
机构：
[1] Tech Univ Denmark, DK-2800 Lyngby, Denmark
来源：
MEMS 2008: 21ST IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Encouraged by the results of He and Yang [1], we have designed and fabricated silicon test chips to investigate the piezoresistive properties of both crystalline and polycrystalline nanowires using a top-down approach, in order to comply with conventional fabrication techniques. The test chip consists of 5 silicon nanowires and a reference resistor, each with integrated contacts for electrical 4-point measurements. We show an increase in the piezoresistive effect of 633% compared to bulk silicon. Preliminary temperature measurements indicate a larger temperature dependence of silicon nanowires, compared to bulk silicon. An increase of up to 34% compared to bulk polysilicon is observed in polysilicon nanowires with decreasing dimensions.
引用
收藏
页码：717 / 720
页数：4
相关论文
共 50 条
  • [21] Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications
    Nuzaihan, M. M. N.
    Hashim, U.
    Arshad, M. K. Md
    Ruslinda, A. Rahim
    Rahman, S. F. A.
    Fathil, M. F. M.
    Ismail, Mohd H.
    PLOS ONE, 2016, 11 (03):
  • [22] Top-Down Fabricated Silicon-Nanowire-Based Field-Effect Transistor Device on a (111) Silicon Wafer
    Yu, Xiao
    Wang, Yuchen
    Zhou, Hong
    Liu, Yanxiang
    Wang, Yi
    Li, Tie
    Wang, Yuelin
    SMALL, 2013, 9 (04) : 525 - 530
  • [23] Piezoresistance of top-down suspended Si nanowires
    Koumela, A.
    Mercier, D.
    Dupre, C.
    Jourdan, G.
    Marcoux, C.
    Ollier, E.
    Purcell, S. T.
    Duraffourg, L.
    NANOTECHNOLOGY, 2011, 22 (39)
  • [24] Precessed electron diffraction study of defects and strain in GaN nanowires fabricated by top-down etching
    Martin, Gemma
    Lopez-Conesa, Lluis
    del Pozo, Daniel
    Portillo, Quim
    Doundoulakis, George
    Georgakilas, Alexandros
    Estrade, Sonia
    Peiro, Francesca
    APPLIED PHYSICS LETTERS, 2022, 121 (08)
  • [25] Doping top-down e-beam fabricated germanium nanowires using molecular monolayers
    Long, B.
    Verni, G. Alessio
    O'Connell, J.
    Shayesteh, M.
    Gangnaik, A.
    Georgiev, Y. M.
    Carolan, P.
    O'Connell, D.
    Kuhn, K. J.
    Clendenning, S. B.
    Nagle, R.
    Duffy, R.
    Holmes, J. D.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 62 : 196 - 200
  • [26] Novel Top-Down Wafer-Scale Fabrication of Single Crystal Silicon Nanowires
    Tong, Hien Duy
    Chen, Songyue
    van der Wiel, Wilfred G.
    Carlen, Edwin T.
    van den Berg, Albert
    NANO LETTERS, 2009, 9 (03) : 1015 - 1022
  • [27] Top-down fabricated silicon nanowire sensors for real-time chemical detection
    Park, Inkyu
    Li, Zhiyong
    Pisano, Albert P.
    Williams, R. Stanley
    NANOTECHNOLOGY, 2010, 21 (01)
  • [28] Top-Down Fabricated Silicon Nanowire Arrays for Field-Effect Detection of Prostate-Specific Antigen
    Rani, Dipti
    Pachauri, Vivek
    Madaboosi, Narayanan
    Jolly, Pawan
    Xuan-Thang Vu
    Estrela, Pedro
    Chu, Virginia
    Conde, Joao Pedro
    Ingebrandt, Sven
    ACS OMEGA, 2018, 3 (08): : 8471 - 8482
  • [29] Correlation between Surface Stress and Apparent Young's Modulus of Top-Down Silicon Nanowires
    Pennelli, Giovanni
    Totaro, Massimo
    Nannini, Andrea
    ACS NANO, 2012, 6 (12) : 10727 - 10734
  • [30] Silicon nanowires honeycomb array fabrication with low-cost top-down technology on (111) silicon wafer
    Yu, Xiao
    Wang, Yuchen
    Li, Tie
    Wang, Yuelin
    2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013, 2013, : 1115 - 1118
12345