A 60 GHz power amplifier in 90nm CMOS technology

被引：14
|
作者：
Heydari, Babak [1 ]
Bohsali, Mounir [1 ]
Adabi, Ehsan [1 ]
Niknejad, Ali M. [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
PROCEEDINGS OF THE IEEE 2007 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2007年
关键词：
D O I：
10.1109/CICC.2007.4405843
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A two-stage 60 GHz 90nm CMOS PA has been designed and fabricated. The amplifier has a measured power gain of 9.8 dB. The input is gain matched while the output is matched to maximize the output power. The measured P-1dB = 6.7 dBm with a corresponding power added efficiency of 20%. This amplifier can be used as a pre-driver or as the main PA for short range wireless communication. The output power can be boosted with on-chip or spatial power combining.
引用
收藏
页码：769 / 772
页数：4
相关论文
共 50 条
  • [41] A 60 GHz High-Q Tapered Transmission Line Resonator in 90nm CMOS
    Marcu, Cristian
    Niknejad, Ali M.
    [J]. 2008 IEEE MTT-S International Microwave Symposium Digest, Vols 1-4, 2008, : 1037 - 1040
  • [42] Power Management Controller for Automotive MCU Applications in 90nm CMOS Technology
    Mansano, Andre
    Boas, Andre Vilas
    Olmos, Alfredo
    Pietri, Stefano
    Soldera, Jefferson D. B.
    [J]. 2011 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2011, : 2545 - 2548
  • [43] Comparative analysis of comparators in 90nm CMOS Technology
    Khatak, Anil
    Kumar, Manoj
    Dhull, Sanjeev
    [J]. 2018 INTERNATIONAL CONFERENCE ON POWER ENERGY, ENVIRONMENT AND INTELLIGENT CONTROL (PEEIC), 2018, : 493 - 500
  • [44] NBTI reliability analysis for a 90nm CMOS technology
    Puchner, H
    Hinh, L
    [J]. ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, : 257 - 260
  • [45] Design of 60-GHz 90-nm CMOS Balanced Power Amplifier With Miniaturized Quadrature Hybrids
    Lin, Chien-Chih
    Yu, Chun-Han
    Kuo, Hsin-Chih
    Chuang, Huey-Ru
    [J]. 2014 IEEE TOPICAL CONFERENCE ON POWER AMPLIFIERS FOR WIRELESS AND RADIO APPLICATIONS (PAWR), 2014, : 52 - 54
  • [46] Compact High-Power 60 GHz Power Amplifier in 65 nm CMOS
    Farahabadi, Payam M.
    Moez, Kambiz
    [J]. 2013 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2013,
  • [47] A 60-GHz 90-nm CMOS cascode amplifier with interstage matching
    Heydari, B.
    Reynaert, P.
    Adabi, E.
    Bohsali, M.
    Afshar, B.
    Arbabian, M. A.
    Niknejad, A. M.
    [J]. 2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, 2007, : 225 - 228
  • [48] A 86 to 108 GHz amplifier in 90 nm CMOS
    Jiang, Yu-Sian
    Tsai, Zuo-Min
    Tsai, Jeng-Han
    Chen, Hsien-Te
    Wang, Huei
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2008, 18 (02) : 124 - 126
  • [49] A 15-20GHz Delay-Locked Loop in 90nm CMOS Technology
    Chang, Jung-Yu
    Chuang, Chi-Nan
    Liu, Shen-Iuan
    [J]. 2008 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE, 2008, : 213 - 216
  • [50] A 60 GHz Tunable Output Profile Power Amplifier in 65 nm CMOS
    Liu, Jenny Yi-Chun
    Gu, Qun Jane
    Tang, Adrian
    Wang, Ning-Yi
    Chang, Mau-Chung Frank
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2011, 21 (07) : 377 - 379
12345