A 60 GHz Tunable Output Profile Power Amplifier in 65 nm CMOS

被引：10

作者：

Liu, Jenny Yi-Chun ^{[1
]}

Gu, Qun Jane ^{[2
]}

Tang, Adrian ^{[1
]}

Wang, Ning-Yi ^{[1
]}

Chang, Mau-Chung Frank ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 07期

关键词：

CMOS; millimeter wave; power amplifier (PA); transformers;

D O I：

10.1109/LMWC.2011.2152386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated three-stage 60 GHz power amplifier with amplitude/phase compensation is realized in 65 nm CMOS. An adaptive feedback bias scheme with three control knobs is proposed to extend the linear operating region. At a supply voltage of 1 V, the fully differential amplifier achieves a linear gain of 15 dB and occupies a compact area of 0.056 mm(2). It achieves a minimal P-sat-P-1 dB separation of 0.6 dB by extending the P-1 dB by 8.5 dB. To our best knowledge, this is the smallest P-sat-P-1 dB separation reported to date. With on-chip phase compensation, the output phase variation is reduced by 57%.

引用

页码：377 / 379

页数：3

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