Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device

被引：24
|
作者：
Choi, Ju-Young [1 ]
Yu, Hwan-Chul [1 ]
Lee, Jeongjun [2 ]
Jeon, Jihyun [2 ]
Im, Jaehyuk [2 ]
Jang, Junhwan [2 ]
Jin, Seung-Won [1 ]
Kim, Kyoung-Kook [3 ]
Cho, Soohaeng [2 ]
Chung, Chan-Moon [1 ]
机构：
[1] Yonsei Univ, Dept Chem, Wonju 26493, Gangwon Do, South Korea
[2] Yonsei Univ, Dept Phys, Wonju 26493, Gangwon Do, South Korea
[3] Korea Polytech Univ, Dept Nanoopt Engn, Shihung 15073, South Korea
来源：
POLYMERS | 2018年 / 10卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
polyimide nanocomposite; graphene oxide; nonvolatile resistive memory; RRAM; WORM; GRAPHENE OXIDE; FUNCTIONALIZED GRAPHENE; CHEMICAL-REDUCTION; GRAPHITE; POLYIMIDES; NANOSHEETS; TRANSPARENCY; DEPOSITION; BEHAVIOR;
D O I：
10.3390/polym10080901
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
2,6-Diaminoanthracene (AnDA)-functionalized graphene oxide (GO) (AnDA-GO) was prepared and used to synthesize a graphene oxide-based polyimide (PI-GO) by the in-situ polymerization method. A PI-GO nanocomposite thin film was prepared and characterized by infrared (IR) spectroscopy, thermogravimetric analysis (TGA) and UV-visible spectroscopy. The PI-GO film was used as a memory layer in the fabrication of a resistive random access memory (RRAM) device with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes. The device showed write-once-read-many-times (WORM) characteristics with a high ON/OFF current ratio (I-on/I-off = 3.41 x 10(8)). This excellent current ratio was attributed to the high charge trapping ability of GO. In addition, the device had good endurance until the 100th cycle. These results suggest that PI-GO is an attractive candidate for applications in next generation nonvolatile memory.
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页数：11
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