Resistive switching characteristics of metal oxide for nonvolatile memory applications

被引：0
|
作者：
Dong, R. [1 ]
Hasan, M. [1 ]
Choi, H. J. [1 ]
Lee, D. S. [1 ]
Pyun, M. B. [1 ]
Seong, D. J. [1 ]
Hwang, Hyunsang [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
来源：
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年
关键词：
D O I：
10.1109/ICSICT.2008.4734691
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The resistance switching characteristics of several metal oxides has been reported recently for nonvolatile memory applications (NVM). However, various issues such as the switching mechanisms, switching uniformity, scalability and reproducibility have not yet been solved. In this paper, we discuss the recent progress of switching mechanisms and switching behaviors of various materials.
引用
收藏
页码：901 / 904
页数：4
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