Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

被引:161
|
作者
Chen, C. [1 ]
Yang, Y. C. [1 ]
Zeng, F. [1 ]
Pan, F. [1 ]
机构
[1] Tsinghua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
aluminium compounds; copper; III-V semiconductors; platinum; random-access storage; semiconductor storage;
D O I
10.1063/1.3483158
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly stable and reproducible bipolar resistive switching effects are reported on Cu/AlN/Pt devices. Memory characteristics including large memory window of 10(3), long retention time of >10(6) s and good endurance of >10(3) were demonstrated. It is concluded that the reset current decreases as compliance current decreases, which provides an approach to suppress power consumption. The dominant conduction mechanisms of low resistance state and high resistance state were verified by Ohmic behavior and trap-controlled space charge limited current, respectively. The memory effect is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in AlN films. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483158]
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页数:3
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