GaAs-based single electron transistors and logic inverters utilizing Schottky wrap-gate controlled quantum wires and dots

被引：7
|
作者：
Kasai, S
Hasegawa, H
机构：
[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 3B期
关键词：
single electron transistor (SET); single electron logic inverter; Schottky wrap gate (WPG); GaAs; transfer gain; quantum dot; quantum wire;
D O I：
10.1143/JJAP.40.2029
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs-based single electron transistors (SETs) and their logic inverters were successfully designed and fabricated using a Schottky wrap-gate (WPG) quantum wire and dot formation technology. Three-gate WPG SETs, which have two tunnel barrier gates and a center gate for a quantum dot-potential control, showed voltage gains larger than unity due to tight dot-potential control of the center WPG. The conductance peak position of the SET could be systematically controlled by changing the tunnel-barrier-control WPG voltages. A resistive-load single electron inverter utilizing a 3-gate WPG SET as a driver and a WPG quantum wire transistor as an active load was fabricated and it showed a proper inverter operation at 1.6 K and realized a logic transfer gain of larger than unity (1.3) for the first time in III-V semiconductor-based SET inverters. A III-V semiconductor-based complimentary inverter utilizing two 3-gate WPG SETs was also successfully fabricated for the first time and the inverter operation was also confirmed at 1.7 K.
引用
收藏
页码：2029 / 2032
页数：4
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