A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon

被引：60
|
作者：
Kasai, S [1 ]
Hasegawa, H
机构：
[1] Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan
来源：
IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 08期
基金：
日本学术振兴会;
关键词：
binary decision diagram (BDD); GaAs; logic circuit; Schottky wrap gate (WPG); single electron;
D O I：
10.1109/LED.2002.801291
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel hexagonal binary-decision-diagram (BDD) quantum logic circuit approach for III-V quantum large scale integrated circuits is proposed and its basic feasibility is demonstrated. In this approach, a III-V hexagonal nanowire network is controlled by Schottky wrap gates (WPGs) to implement BDD logic architecture by path switching. A novel single electron BDD OR logic circuit is successfully fabricated on a GaAs nanowire hexagon and correct circuit operation has been confirmed from 1.5 K to 120 K, showing that the WPG BDD circuit can operate over a wide temperature range by trading off between the power-delay product and the operation temperature.
引用
收藏
页码：446 / 448
页数：3
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