An Indium-Free Transparent Resistive Switching Random Access Memory

被引：24

作者：

Zheng, K. ^{[1
]}

Sun, X. W. ^{[1
,2
]}

Zhao, J. L. ^{[2
]}

Wang, Y. ^{[1
]}

Yu, H. Y. ^{[1
]}

Demir, H. V. ^{[1
,3
,4
,5
]}

Teo, K. L. ^{[6
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Tianjin Univ, Coll Sci, Dept Appl Phys, Tianjin 300072, Peoples R China

[3] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 639798, Singapore

[4] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey

[5] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey

[6] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117608, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 06期

关键词：

GZO; indium free; transparent resistive switching; ZnO;

D O I：

10.1109/LED.2011.2126017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an indium-free transparent resistive switching random access memory device based on GZO-Ga2O3-ZnO-Ga2O3-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.

引用

页码：797 / 799

页数：3

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