An Indium-Free Transparent Resistive Switching Random Access Memory

被引：24

作者：

Zheng, K. ^{[1
]}

Sun, X. W. ^{[1
,2
]}

Zhao, J. L. ^{[2
]}

Wang, Y. ^{[1
]}

Yu, H. Y. ^{[1
]}

Demir, H. V. ^{[1
,3
,4
,5
]}

Teo, K. L. ^{[6
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Tianjin Univ, Coll Sci, Dept Appl Phys, Tianjin 300072, Peoples R China

[3] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 639798, Singapore

[4] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey

[5] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey

[6] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117608, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 06期

关键词：

GZO; indium free; transparent resistive switching; ZnO;

D O I：

10.1109/LED.2011.2126017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an indium-free transparent resistive switching random access memory device based on GZO-Ga2O3-ZnO-Ga2O3-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.

引用

页码：797 / 799

页数：3

共 50 条

[31] Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides
Li, Tan-Yi
Wang, Da-Wei
Du, Sichao
Chen, Wenchao
Yin, Wen-Yan
[J]. PROCEEDINGS OF THE 2020 IEEE INTERNATIONAL CONFERENCE ON COMPUTATIONAL ELECTROMAGNETICS (ICCEM 2020), 2020, : 27 - 28
[32] Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory
Park, Sung Pyo
Tak, Young Jun
Kim, Hee Jun
Lee, Jin Hyeok
Yoo, Hyukjoon
Kim, Hyun Jae
[J]. ADVANCED MATERIALS, 2018, 30 (26)
[33] Indium-free alternative
Rachel Won
[J]. Nature Photonics, 2012, 6 (2) : 70 - 70
[34] Pathway to high throughput, low cost indium-free transparent electrodes
Stapleton, Andrew J.
Yambem, Soniya
Johns, Ashley H.
Gibson, Christopher T.
Shearer, Cameron J.
Ellis, Amanda V.
Shapter, Joe G.
Andersson, Gunther G.
Quinton, Jamie S.
Burn, Paul L.
Meredith, Paul
Lewis, David A.
[J]. JOURNAL OF MATERIALS CHEMISTRY A, 2015, 3 (26) : 13892 - 13899
[35] Transparent bipolar resistive switching memory on a flexible substrate with indium-zinc-oxide electrodes
Yeom, Seung-Won
Ha, Hyeon Jun
Park, Junsu
Shim, Jae Won
Ju, Byeong-Kwon
[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 69 (11) : 1613 - 1618
[36] Transparent bipolar resistive switching memory on a flexible substrate with indium-zinc-oxide electrodes
Seung-Won Yeom
Hyeon Jun Ha
Junsu Park
Jae Won Shim
Byeong-Kwon Ju
[J]. Journal of the Korean Physical Society, 2016, 69 : 1613 - 1618
[37] Organic Heterostructures with Indium-Free Transparent Conductor Electrode for Optoelectronic Applications
Petre, Gabriela
Stanculescu, Anca
Girtan, Mihaela
Socol, Marcela
Breazu, Carmen
Vacareanu, Loredana
Preda, Nicoleta
Rasoga, Oana
Stanculescu, Florin
Doroshkevich, Aleksandr S.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 219 (15):
[38] Review of indium-free, transparent and flexible metallic fibers for wearable electronics
Joshi, Bhavana
Samuel, Edmund
An, Seongpil
Kim, Siwung
Yarin, Alexander L.
Yoon, Sam S.
[J]. CHEMICAL ENGINEERING JOURNAL, 2023, 475
[39] Resistance switching characteristics of Ag/ZnO/graphene resistive random access memory
Tian, Ruizhao
Li, Lianyue
Yang, Kanyu
Yang, Zhengchun
Wang, Hanjie
Pan, Peng
He, Jie
Zhao, Jinshi
Zhou, Baozeng
[J]. VACUUM, 2023, 207
[40] Temperature induced complementary switching in titanium oxide resistive random access memory
Panda, D.
Simanjuntak, F. M.
Tseng, T. -Y.
[J]. AIP ADVANCES, 2016, 6 (07)

← 1 2 3 4 5 →