Demonstration of Fowler-Nordheim Tunneling in Simple Solution-Processed Thin Films

被引：15

作者：

Perkins, Cory K. ^{[1
]}

Jenkins, Melanie A. ^{[2
]}

Chiang, Tsung-Han ^{[2
]}

Mansergh, Ryan H. ^{[1
]}

Gouliouk, Vasily ^{[1
]}

Kenane, Nizan ^{[1
]}

Wager, John F. ^{[2
]}

Conley, John F., Jr. ^{[2
]}

Keszler, Douglas A. ^{[1
]}

机构：

[1] Oregon State Univ, Dept Chem, 153 Gilbert Hall, Corvallis, OR 97331 USA

[2] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 42期

基金：

美国国家科学基金会;

关键词：

solution-processed Al2O3; Fowler-Nordheim tunneling; MIM diodes; quantum tunneling; flat-Al-13; nanocluster; LOW-TEMPERATURE; OXIDE; ALUMINUM(III); NANOCLUSTERS; HYDROLYSIS; PRECURSORS; DEPOSITION; INKS;

D O I：

10.1021/acsami.8b08986

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The production of high-quality thin-film insulators is essential to develop advanced technologies based on electron tunneling. Current insulator deposition methods, however, suffer from a variety of limitations, including constrained substrate sizes, limited materials options, and complexity of patterning. Here, we report the deposition of large-area Al2O3 films by a solution process and its integration in metal insulator metal devices that exhibit I-V signatures of Fowler-Nordheim electron tunneling. A unique, high-purity precursor based on an aqueous solution of the nanocluster flat-Al-13 transforms to thin Al2O3 insulators free of the electron traps and emission states that commonly inhibit tunneling in other films. Tunneling is further confirmed by the temperature independence of device current.

引用

页码：36082 / 36087

页数：6

共 50 条

[41] AN EXPERIMENTAL-STUDY OF THE FOWLER-NORDHEIM TUNNELING INDUCED DEGRADATION OF LDD PMOSFETS
PAN, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (02) : 268 - 271
[42] Metal gate work function extraction using Fowler-Nordheim tunneling techniques
Sjöblom, G
Pantisano, L
Schram, T
Olsson, J
Afanas'ev, VV
Heyns, M
[J]. MICROELECTRONIC ENGINEERING, 2005, 80 : 280 - 283
[43] Dramatically Enhanced Broadband Photodetection by Dual Inversion Layers and Fowler-Nordheim Tunneling
Zou, Haiyang
Li, Xiaogan
Dai, Guozhang
Peng, Wenbo
Ding, Yong
Zhang, Ying
Wang, Aurelia Chi
Zhang, Steven L.
Xu, Cheng
Zhang, Shi-Li
Wang, Zhong Lin
[J]. ACS NANO, 2019, 13 (02) : 2289 - 2297
[44] Polymer and polymer/metal interface characterization via Fowler-Nordheim tunneling measurements
Hummelgen, IA
Roman, LS
Nart, FC
Peres, LO
Sa, EL
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (22) : 3194 - 3196
[45] Fowler-Nordheim tunneling-assisted enhancement of tunneling electroresistance effect through a composite barrier
Wang, Yihao
Zhang, Qi
Zhou, Jinling
Liu, Jiaolian
Ma, Zhijun
Zhou, Peng
Zhang, Tianjin
Valanoor, Nagarajan
[J]. APPLIED PHYSICS LETTERS, 2020, 116 (20)
[46] DEGRADATION OF METAL-OXIDE SEMICONDUCTOR STRUCTURES BY FOWLER-NORDHEIM TUNNELING INJECTION
BALLAND, B
PLOSSU, C
BARDY, S
[J]. THIN SOLID FILMS, 1987, 148 (02) : 149 - 162
[47] Fowler-Nordheim Tunneling From Quantum Wires Of Different Cross-Sections
Sett, Shubhasree Biswas
Bose, Chavanika
[J]. PROCEEDINGS OF THE 2012 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, DEVICES AND INTELLIGENT SYSTEMS (CODLS), 2012, : 172 - 175
[48] 1/f noise degradation caused by Fowler-Nordheim tunneling stress in MOSFETs
Toita, M
Sugawa, T
Teramoto, A
Akaboshi, T
Imai, H
Ohmi, T
[J]. 41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, : 313 - 317
[49] THE EFFECT OF FOWLER-NORDHEIM TUNNELING CURRENT ON THIN SIO2 METAL-OXIDE-SEMICONDUCTOR CAPACITORS
HOSOI, T
AKIZAWA, M
MATSUMOTO, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2072 - 2076
[50] Study of Fowler-Nordheim tunneling current oscillations in ultra-thin insulator MOS structure by interference method
Mao, LF
Tan, CH
Xu, MZ
Wei, JL
[J]. ACTA PHYSICA SINICA, 2000, 49 (05) : 974 - 982

← 1 2 3 4 5 →